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TSA5888 - Low Vcesat PNP Transistor

Description

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Features

  • Adoption of FBET and MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitales miniaturization in end products.
  • High allowable power dissipation.
  • Ordering Information Part No. Package Packing TSA5888CY RMG SOT-89 1Kpcs / 7” Reel Note: “G” denote for Halogen Free Product Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitte.

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Datasheet Details

Part number TSA5888
Manufacturer Taiwan Semiconductor
File Size 167.42 KB
Description Low Vcesat PNP Transistor
Datasheet download datasheet TSA5888 Datasheet
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Full PDF Text Transcription

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TSA5888 Low Vcesat PNP Transistor SOT-89 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO BVCEO IC VCE(SAT) -50V -40V -5.5A -175mV @ IC / IB = -3.5A / -175mA Features Adoption of FBET and MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitales miniaturization in end products. ● High allowable power dissipation. ● ● ● ● ● Ordering Information Part No.
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