TSA5888 - Low Vcesat PNP Transistor

Taiwan Semiconductor

Datasheet Details

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Adoption of FBET and MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitales miniaturization in end products.
High allowable power dissipation.
Ordering Information Part No. Package Packing TSA5888CY RMG SOT-89 1Kpcs / 7” Reel Note: “G” denote for Halogen Free Product Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitte.

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